Description
Infineon Technologies BSZ060NE2LS MOSFET N-Channel 25 V 12A 40A(Tc) 2.1W (Ta), 26W (Tc) Surface Mount PG-TSDSON-8-FL RoHS
Specifications
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TSDSON-8
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 25 V
Id – Continuous Drain Current: 40 A
Rds On – Drain-Source Resistance: 6.5 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 2 V
Qg – Gate Charge: 9.1 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 26 W
Channel Mode: Enhancement
Tradename: OptiMOS
Packaging: Reel
Packaging: Cut Tape
Brand: Infineon Technologies
Configuration: Single
Fall Time: 1.8 ns
Forward Transconductance – Min: 34 S
Height: 1.1 mm
Length: 3.3 mm
Product Type: MOSFET
Rise Time: 2.2 ns
pack Quantity:5000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 11 ns
Typical Turn-On Delay Time: 2.5 ns
Width: 3.3 mm
Part # Aliases: SP000776122 BSZ6NE2LSXT BSZ060NE2LSATMA1
Unit Weight: 0.003966 oz
Manufacturer:Infineon Technologies
Datasheet:Infineon/BSZ060NE2LS.pdf
