CMPA801B025F-AMP CREE TEST BOARD WITH GaN HEMT INSTALLED

CMPA801B025F-AMP CREE TEST BOARD WITH GaN HEMT INSTALLED RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER RoHS

SKU: CMPA801B025F-AMP Category: Tags: , Brand:

Description

The CMPA5585025F-AMP from CREE is a GaN HEMT based power amplifier which operates between 5.5 and 8.5 GHz. It is ideal for point to point radio, communication and SATCOM applications. It provides 35 W of typical saturated power with a small signal gain of 24 dB and 30% of power added efficiency. The CMPA5585025F has a high breakdown voltage, higher thermal conductivity and requires up to 28V. It is available in a 10 lead metal/ceramic flanged package which measures 1.00 x 0.385 inches.^

Specification
35 W, GaN Power Amplifier from 5.5 to 8.5 GHz
^Type Power Amplifier, GaN Amplifier
^Configuration IC / MMIC
^Application Commercial, SATCOM, Point-to-Point, Radar, Radio System
^Frequency 5.5 to 8.5 GHz
^Gain 17.5 to 24 dB
^Power Gain 16 dB
^Small Signal Gain 17.5 to 24 dB
^Saturated Power 35 W
^PAE 35% to 37%
^Impedance 50 Ohms
^VSWR 5.00:1
^Input VSWR 5.00:1
^Output VSWR 5.00:1
^Input Return Loss -6 to -3.5 dB
^Output Return Loss -6 to -2.9 dBm

Manufacturer Part Number: CMPA801B025F-AMP
Manufacturer: Electronic Components

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