Description
CSD17303Q5 Texas Instruments NexFET Power MOSFET N-Channel 30 V 32A (Ta), 100A (Tc) 3.2W Surface Mount 8-VSON-CLIP T/R RoHS
Specifications
Manufacturer: Texas Instruments
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: VSON-CLIP-8
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 30 V
Id – Continuous Drain Current: 100 A
Rds On – Drain-Source Resistance: 2.4 mOhms
Vgs – Gate-Source Voltage: – 8 V, + 8 V
Vgs th – Gate-Source Threshold Voltage: 1.1 V
Qg – Gate Charge: 18 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 3.2 W
Channel Mode: Enhancement
Tradename: NexFET
Packaging: Reel
Packaging: Cut Tape
Brand: Texas Instruments
Configuration: Single
Fall Time: 10.4 ns
Forward Transconductance – Min: 114 S
Height: 1 mm
Length: 6 mm
Product Type: MOSFET
Rise Time: 16 ns
Series: CSD17303Q5
Reel:2500
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 27 ns
Typical Turn-On Delay Time: 11.4 ns
Width: 5 mm
Unit Weight: 0.008818 oz
Power Field-Effect Transistor, 100A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer: Texas Instruments
MFG Part #: CSD17303Q5
