Description
CSD17309Q3 Texas Instruments N CHANNEL, MOSFET, 30V, 60A, SON-8, FULL REEL, Transistor Polarity:N Channel, Continuous Drain Current Id:60A, Drain Source Voltage Vds:30V, On Resistance Rds(on):4.2mohm, Rds(on) Test Voltage Vgs:8V, Threshold Voltage Vgs:1.2V , RoHS
This 30 V, 4.2 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.
Features
- Optimized for 5 V Gate Drive
- Ultra-Low Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Pb Free Terminal Plating
- RoHS Compliant
- Halogen Free
- SON 3.3 mm × 3.3 mm Plastic Package
- APPLICATIONS
- Notebook Point of Load
- Point of Load Synchronous Buck in
Networking, Telecom, and Computing
Systems
Specifications
Manufacturer: Texas Instruments
Product Category: MOSFET
RoHS: RoHS Compliant By Exemption
Technology: Si
Mounting Style: SMD/SMT
Package / Case: VSON-Clip-8
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 30 V
Id – Continuous Drain Current: 20 A
Rds On – Drain-Source Resistance: 6.3 mOhms
Vgs – Gate-Source Voltage: 10 V
Vgs th – Gate-Source Threshold Voltage: 1.2 V
Qg – Gate Charge: 7.5 nC
Maximum Operating Temperature: + 150 C
Packaging: Reel
Brand: Texas Instruments
Configuration: Single
Fall Time: 3.6 ns
Minimum Operating Temperature: – 55 C
Pd – Power Dissipation: 2.8 W
Rise Time: 9.9 ns
Series: CSD17309Q3
Factory Pack Quantity: 2500
Tradename: NexFET
Transistor Type: 1 N-Channel
Type: Power Mosfet
Manufacturer Part Number: CSD17309Q3
Manufacturer: Texas Instruments
