Description
CSD19531Q5AT Texas Instruments MOSFET N-Channel 100V 100A 3.3W (Ta), 125W (Tc) Surface Mount 8-VSONP T/R RoHS
Specifications
Manufacturer: Texas Instruments
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: VSONP-8
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 100 V
Id – Continuous Drain Current: 100 A
Rds On – Drain-Source Resistance: 6.4 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 2.7 V
Qg – Gate Charge: 37 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 3.3 W
Channel Mode: Enhancement
Tradename: NexFET
Packaging: Reel
Packaging: Cut Tape
Brand: Texas Instruments
Configuration: Single
Fall Time: 5.2 ns
Forward Transconductance – Min: 82 S
Height: 1 mm
Length: 6 mm
Product Type: MOSFET
Rise Time: 5.8 ns
Series: CSD19531Q5A
Reel:500
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: NexFET Power MOSFET
Typical Turn-Off Delay Time: 18.4 ns
Typical Turn-On Delay Time: 6 ns
Width: 4.9 mm
Unit Weight: 0.003097 oz
Manufacturer: Texas Instruments
MFG Part #: CSD19531Q5AT
