Description
Cypress Semiconductor CY7C1049CV33-10ZXC 4Mbit SRAM 512K X 8 STATIC RAM
- SRAM Memory IC
- Memory Type:SRAM
- Memory Size:4Mbit
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512K X 8 STATIC RAM ROHS
- SRAM Memory IC
- Memory Type:SRAM
- Memory Size:4Mbit
- Memory Organization:512K x 8
- Access Time, Tacc:10ns
- Memory Voltage, Vcc:3.3V
- Termination Type:SMD
- Package/Case:44-TSOP
- No. of Pins:44
- RoHS Compliant: Yes
Features
High speed tAA = 15 ns· Low active power 1210 mW (max.)· Low CMOS standby power (Commercial L version) 2.75 mW (max.)· 2.0V Data Retention at 2.0V retention)· Automatic power-down when deselected· TTL-compatible inputs and outputs· Easy memory expansion with CE and OE features is provided by an active LOW chip enable (CE), an active LOW output enable (OE), and three-state drivers. Writing to the device is accomplished by taking chip enable (CE) and write enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A18). Reading from the device is accomplished by taking chip enable (CE) and output enable (OE) LOW while forcing write enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins. The eight input/output pins (I/O0 through I/O7) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), or during a write operation (CE LOW, and WE LOW). The CY7C1049 is available in a standard 400-mil-wide 36-pin SOJ package with center power and ground (revolutionary) pinout.
Manufacturer:Cypress
Datasheet:CY7C1049CV33-10ZXC.pdf
