Description
D45H11G onsemi Bipolar (BJT) Transistor PNP 80 V 10 A 40MHz 2 W Through Hole TO-220 RoHS
Specifications
Manufacturer: onsemi
Product Category: Bipolar Transistors – BJT
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: PNP
Configuration: Single
Collector- Emitter Voltage VCEO Max: – 80 V
Collector- Base Voltage VCBO: –
Emitter- Base Voltage VEBO: – 5 V
Collector-Emitter Saturation Voltage: – 1 V
Maximum DC Collector Current: – 10 A
Pd – Power Dissipation: 70 W
Gain Bandwidth Product fT: 40 MHz
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Series: D45H11
Packaging: Tube
Brand: onsemi
Continuous Collector Current: 10 A
DC Collector/Base Gain hfe Min: 60
Height: 15.75 mm
Length: 10.53 mm
Product Type: BJTs – Bipolar Transistors
Subcategory: Transistors
Technology: Si
Width: 4.83 mm
Unit Weight: 0.211644 oz
Manufacturer: ON Semiconductor
MFG Part #: D45H11G
