DMC3016LSD-13 Diodes Mosfet Array 30V 8.2A, 6.2A 8-SOIC

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DMC3016LSD-13 Diodes Incorporated Mosfet Array N and P-Channel Transistor N/P-CH 30V 8.2A/6.2A 8-Pin SO T/R RoHS

SKU: DMC3016LSD-13 Category: Tag: Brand:

Description

DMC3016LSD-13 Diodes Incorporated Mosfet Array N and P-Channel 30V 8.2A, 6.2A 1.2W Surface Mount 8-SOIC RoHS

Specifications
Manufacturer: Diodes Incorporated
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SO-8
Transistor Polarity: N-Channel, P-Channel
Number of Channels: 2 Channel
Vds – Drain-Source Breakdown Voltage: 30 V
Id – Continuous Drain Current: 8.2 A, 6.2 A
Rds On – Drain-Source Resistance: 15 mOhms, 30 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 2.3 V
Qg – Gate Charge: 11.3 nC, 10.9 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 1.2 W
Channel Mode: Enhancement
Packaging: Cut Tape
Packaging: Reel
Configuration: Dual
Series: DMC3016
Transistor Type: 1 N-Channel, 1 P-Channel
Brand: Diodes Incorporated
Fall Time: 5.6 ns, 40.4 ns
Product Type: MOSFET
Rise Time: 16.5 ns, 17.1 ns
Factory Pack Quantity: 2500
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 26.1 ns, 60.5 ns
Typical Turn-On Delay Time: 4.8 ns, 9.7 ns
Unit Weight: 0.026455 oz
Manufacturer: Diodes Inc.
MFG Part #: DMC3016LSD-13

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