DMG2305UX-13 Diodes Inc MOSFET P-Channel 20V 4.2A SOT-23

DMG2305UX-13 Diodes Incorporated MOSFET P-Ch ENH FET 20V 52mOhm -5.0V P-Channel 1.4W 4.2A SOT-23 RoHS

SKU: DMG2305UX-13 Category: Tag: Brand:

Description

DMG2305UX-13 Diodes Incorporated P-Channel 20 V 65 Ohms Surface Mount Enhancement Mode Mosfet – SOT-23-3 RoHS
Specifications
Manufacturer:Diodes Incorporated
Product Category:MOSFET
RoHS
Technology:Si
Mounting Style:SMD/SMT
Package / Case:SOT-23-3
Transistor Polarity:P-Channel
Number of Channels:1 Channel
Vds – Drain-Source Breakdown Voltage:20 V
Id – Continuous Drain Current:4.2 A
Rds On – Drain-Source Resistance:52 mOhms
Vgs – Gate-Source Voltage:8 V
Vgs th – Gate-Source Threshold Voltage:900 mV
Qg – Gate Charge:10.2 nC
Minimum Operating Temperature:- 55 C
Maximum Operating Temperature:+ 150 C
Pd – Power Dissipation:1.4 W
Channel Mode:Enhancement
Packaging:Cut Tape
Packaging:Reel
Configuration:Single
Series:DMG2305
Transistor Type:1 P-Channel
Brand:Diodes Incorporated
Forward Transconductance – Min:9 S
Fall Time:34.7 ns
Product Type:MOSFET
Rise Time:13.7 ns
Factory Pack Quantity:10000
Subcategory:MOSFETs
Typical Turn-Off Delay Time:79.3 ns
Typical Turn-On Delay Time:10.8 ns
Unit Weight:0.000282 oz
Manufacturer:Diodes Inc.
Datasheet:Diodes/DMG2305UX.pdf

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