Description
DMG8822UTS-13 Diodes Inc Transistor MOSFET N-Ch Dual MOSFET 20V VDSS 8V VGSS
Specifications
Manufacturer: Diodes Incorporated
Product Category: MOSFET
RoHS
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TSSOP-8
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 20 V
Id – Continuous Drain Current: 4.9 A, 4.9 A
Rds On – Drain-Source Resistance: 19 mOhms
Vgs th – Gate-Source Threshold Voltage: 500 mV
Vgs – Gate-Source Voltage: 8 V
Qg – Gate Charge: 9.6 nC, 9.6 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Configuration: Dual
Pd – Power Dissipation: 870 mW
Channel Mode: Enhancement
Packaging: Reel
Product: MOSFET Small Signal
Series: DMG8822
Transistor Type: 2 N-Channel
Brand: Diodes Incorporated
Fall Time: 10.1 ns, 10.1 ns
Product Type: MOSFET
Rise Time: 21.1 ns, 21.1 ns
Factory Pack Quantity: 2500
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 38.6 ns, 38.6 ns
Typical Turn-On Delay Time: 7.8 ns, 7.8 ns
Unit Weight: 0.006737 oz
Manufacturer Part Number: DMG8822UTS-13
Manufacturer: Electronic Components
