Description
DMN53D0LQ-7 Diodes Incorporated Power MOSFET, N Channel 50V 500mA AEC-Q101 SOT-23-3 RoHS
Specifications
Manufacturer: Diodes Incorporated
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 50 V
Id – Continuous Drain Current: 500 mA
Rds On – Drain-Source Resistance: 1.6 Ohms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 800 mV
Qg – Gate Charge: 600 pC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 540 mW
Channel Mode: Enhancement
Qualification: AEC-Q101
Packaging: Reel
Packaging: Cut Tape
Brand: Diodes Incorporated
Configuration: Single
Fall Time: 11 ns
Product Type: MOSFET
Rise Time: 2.5 ns
Series: DMN53
Reel:3000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 19 ns
Typical Turn-On Delay Time: 2.7 ns
Unit Weight: 0.000282 oz
Manufacturer:Diodes Inc.
Datasheet:Diodes/DMN53D0LQ.pdf
