Description
FF900R12IP4 Infineon Trans IGBT Module N-CH 1.2KV 900A 8-pin PRIME2-1
Specifications
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: Details
Product: IGBT Silicon Modules
Configuration: Dual
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.1 V
Continuous Collector Current at 25 C: 900 A
Gate-Emitter Leakage Current: 400 nA
Pd – Power Dissipation: 5.1 kW
Package / Case: PRIME2
Minimum Operating Temperature: – 40 C
Maximum Operating Temperature: + 150 C
Packaging: Tray
Height: 38 mm
Length: 172 mm
Width: 89 mm
Brand: Infineon Technologies
Mounting Style: Screw
Maximum Gate Emitter Voltage: +/- 20 V
Product Type: IGBT Modules
Factory Pack Quantity: 3
Subcategory: IGBTs
Part # Aliases: FF900R12IP4BOSA2 SP000609750
Unit Weight: 1.819 lbs
Manufacturer Part Number: FF900R12IP4
Manufacturer: Infineon Technologies
