Description
FQPF8N60C ON Semiconductor MOSFET N-Channel 600V 7.5A (Tc) 48W (Tc) Through Hole TO-220F
Specifications
Manufacturer: ON Semiconductor
Product Category: MOSFET
RoHS
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 600 V
Id – Continuous Drain Current: 7.5 A
Rds On – Drain-Source Resistance: 1.2 Ohms
Vgs – Gate-Source Voltage: 30 V
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Pd – Power Dissipation: 48 W
Channel Mode: Enhancement
Height: 16.3 mm
Length: 10.67 mm
Series: FQPF8N60C
Transistor Type: 1 N-Channel
Type: MOSFET
Width: 4.7 mm
Brand: ON Semiconductor / Fairchild
Forward Transconductance – Min: 8.7 S
Fall Time: 64.5 ns
Product Type: MOSFET
Rise Time: 60.5 ns
Factory Pack Quantity: 1000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 81 ns
Typical Turn-On Delay Time: 16.5 ns
Part # Aliases: FQPF8N60C_NL
Unit Weight: 0.080072 oz
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductors proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Manufacturer Part Number: FQPF8N60C
Manufacturer: ON Semiconductor
