Description
HARRIS 2N6760JTX POWER TRANSISTOR 5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
Type Designator: 2N6760JTX, This family of 2N6756, 2N6758, 2N6760 and 2N6762 switching transistors are military qualified up to the JANTXV level for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.
Type of 2N6760JTX transistor: MOSFET
Type of control channel: N -Channel
Maximum power dissipation (Pd), W: 75
Maximum drain-source voltage |Uds|, V: 400
Maximum gate-source voltage |Ugs|, V: 20
Maximum drain current |Id|, A: 5.5
Maximum junction temperature (Tj), °C: 150
Rise Time of 2N6760JTX transistor (tr), nS:
Drain-source Capacitance (Cd), pF: 800
Maximum drain-source on-state resistance (Rds), Ohm: 2.2
Package: TO204
Manufacturer:International Rectifier
Datasheet:2n6760.pdf
