Description
IKW40N120H3 Infineon Technologies IGBT, 1.2KV, 80A, 175DEG C, 483W, TO-247, DC Collector Current:80A, Collector Emitter Saturation Voltage Vce(on):2.05V, Power Dissipation Pd:483W, Collector Emitter Voltage V(br)ceo:1.2kV, No. of Pins:3Pins
Specifications
Manufacturer: Infineon
Product Category: IGBT Transistors
RoHS
Technology: Si
Package / Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.05 V
Maximum Gate Emitter Voltage: 20 V
Continuous Collector Current at 25 C: 80 A
Pd – Power Dissipation: 483 W
Minimum Operating Temperature: – 40 C
Maximum Operating Temperature: + 175 C
Series: HighSpeed 3
Packaging: Tube
Continuous Collector Current Ic Max: 80 A
Brand: Infineon Technologies
Gate-Emitter Leakage Current: 600 nA
CNHTS: 8541290000
HTS Code: 8541290095
MXHTS: 85412999
Product Type: IGBT Transistors
Factory Pack Quantity: 240
Subcategory: IGBTs
TARIC: 8541290000
Tradename: TRENCHSTOP
Part # Aliases: IKW40N120H3FKSA1 IKW4N12H3XK SP000674416
Unit Weight: 1.340411 oz
Manufacturer Part Number: IKW40N120H3
Manufacturer: Infineon Technologies
