Description
International Rectifier IRLR3110ZPBF MOSFET Transistor, N Channel, 42 A, 100 V, 14 mohm, 10 V, 2.5 V
The IRLR3110ZPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. This features combines to make this design an extremely efficient and reliable device for use in Industrial applications and a wide variety of other applications.
Specifically designed for Industrial applications, this HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features com- bine to make this design an extremely efficient and reliable device for use in Industrial applications and a wide variety of other applications.
- Fully avalanche rated
- Advanced process technology
- Ultra low on resistance
- Fast switching
Applications
Power Management; Industrial
Manufacturer:International Rectifier
Datasheet:IR/irlr3110zpbf.pdf
