Description
International Rectifier RF630NSTRL N-Channel Enhancement Transistor MOSFET 200V 9.3A SMD D-PAK-3
Fifth Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The is a surface mount power package capable of accommodating die sizes HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate in a typical surface mount application. The through-hole version (IRF630NL) is available for lowprofile application.
Manufacturer:Infineon Technologies
Datasheet:IR/IRF630N.pdf
