Description
IPD068N10N3GATMA1 Infineon Trans MOSFET N-CH 100V 90A Automotive 3-Pin(2+Tab) DPAK T/R
Specifications
Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: PG-TO-252-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 100 V
Id – Continuous Drain Current: 90 A
Rds On – Drain-Source Resistance: 6.8 mOhms
Vgs th – Gate-Source Threshold Voltage: 2 V
Vgs – Gate-Source Voltage: 10 V
Qg – Gate Charge: 51 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Configuration: Single
Pd – Power Dissipation: 150 W
Channel Mode: Enhancement
Tradename: OptiMOS
Packaging: Cut Tape
Packaging: Reel
Height: 2.3 mm
Length: 6.5 mm
Series: OptiMOS 3
Transistor Type: 1 N-Channel
Width: 6.22 mm
Brand: Infineon Technologies
Forward Transconductance – Min: 54 S
Fall Time: 9 ns
Product Type: MOSFET
Rise Time: 37 ns
Factory Pack Quantity: 2500
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 37 ns
Typical Turn-On Delay Time: 19 ns
Part # Aliases: G IPD068N10N3 SP001127816
Unit Weight: 0.139332 oz
Manufacturer Part Number: IPD068N10N3GATMA1
Manufacturer: Electronic Components
