Description
IPD090N03LGATMA1 Infineon N-Channel Transistor MOSFET N-CH 30V 40A 3-Pin(2+Tab) TO-252 – Tape and Reel
Specifications
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Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TO-252-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 30 V
Id – Continuous Drain Current: 40 A
Rds On – Drain-Source Resistance: 7.5 mOhms
Vgs – Gate-Source Voltage: 20 V
Qg – Gate Charge: 15 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Configuration: Single
Pd – Power Dissipation: 42 W
Tradename: OptiMOS
Packaging: Cut Tape
Packaging: Reel
Height: 2.3 mm
Length: 6.5 mm
Series: OptiMOS 3
Transistor Type: 1 N-Channel
Width: 6.22 mm
Brand: Infineon Technologies
Forward Transconductance – Min: 53 S
Fall Time: 2.6 ns
Product Type: MOSFET
Rise Time: 3 ns
Factory Pack Quantity: 2500
Subcategory: MOSFETs
Part # Aliases: G IPD090N03L IPD9N3LGXT SP000680636
Unit Weight: 0.139332 oz
Manufacturer Part Number: IPD090N03LGATMA1
Manufacturer: Infineon Technologies