IPD50N08S413ATMA1 Infineon MOSFET N-Channel 80V 50A PG-TO252-3

IPD50N08S413ATMA1 Infineon Technologies MOSFET 80V, N-Ch, 13.2 mOhm max, Automotive, DPAK, OptiMOS-T2, PG-TO252-3, RoHS

SKU: IPD50N08S413ATMA1 Category: Tag: Brand:

Description

IPD50N08S413ATMA1 Infineon Technologies N-Channel 80V 50A (Tc) 72W (Tc) Surface Mount PG-TO252-3-313 RoHS
Specifications
Manufacturer:Infineon
Product Category:MOSFET
Technology:Si
Mounting Style:SMD/SMT
Package / Case:TO-252-3
Transistor Polarity:N-Channel
Number of Channels:1 Channel
Vds – Drain-Source Breakdown Voltage:80 V
Id – Continuous Drain Current:50 A
Rds On – Drain-Source Resistance:11.2 mOhms
Vgs – Gate-Source Voltage:- 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage:2 V
Qg – Gate Charge:30 nC
Minimum Operating Temperature:- 55 C
Maximum Operating Temperature:+ 175 C
Pd – Power Dissipation:72 W
Channel Mode:Enhancement
Qualification:AEC-Q101
Packaging:Cut Tape
Packaging:Reel
Configuration:Single
Height:2.3 mm
Length:6.5 mm
Transistor Type:1 N-Channel
Width:6.22 mm
Brand:Infineon Technologies
Fall Time:11.8 ns
Product Type:MOSFET
Rise Time:3.6 ns
Factory Pack Quantity:2500
Subcategory:MOSFETs
Typical Turn-Off Delay Time:6.4 ns
Typical Turn-On Delay Time:5 ns
Part # Aliases:IPD50N08S4-13 SP000988948
Unit Weight:0.139332 oz
Manufacturer:Infineon Technologies
Datasheet:IPD50N08S4-13.pdf

Product Enquiry