Description
Infineon Technologies IPD60R385CP, Power Transistor MOSFET N-CH 600 V 9 A N-CHAN 600V TO-252
Specifications
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TO-252-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 600 V
Id – Continuous Drain Current: 9 A
Rds On – Drain-Source Resistance: 350 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 2.5 V
Qg – Gate Charge: 22 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 83 W
Channel Mode: Enhancement
Tradename: CoolMOS
Packaging: Cut Tape
Packaging: Reel
Configuration: Single
Height: 2.3 mm
Length: 6.5 mm
Series: CoolMOS CP
Transistor Type: 1 N-Channel
Width: 6.22 mm
Brand: Infineon Technologies
Fall Time: 5 ns
Product Type: MOSFET
Rise Time: 5 ns
Factory Pack Quantity: 2500
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 40 ns
Typical Turn-On Delay Time: 10 ns
Part # Aliases: SP000307381 IPD60R385CPBTMA1
Unit Weight: 0.011640 oz
Lifecycle:Obsolete
CoolMOS™ CP, Infineon’s fifth series of CoolMOS™, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV.
Summary of Features
Lowest figure of merit R on x Q g
Ultra low gate charge
Extreme dv/dt rate
Ultra low R DS(on), ultra low gate charge, very fast switching
V th 3 V, g fs very high, internal R g very low
High current capability
Significant reduction of conduction and switching losses
High power density and efficiency for superior power conversion systems
Best-in-class price/performance ratio
Manufacturer: Infineon Technologies
MFG Part #: IPD60R385CP
