Description
IPP020N06N Infineon Technologies Trans MOSFET N-CH 60V 120A Automotive 3-Pin(3+Tab) TO-220 RoHS
Specifications
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 60 V
Id – Continuous Drain Current: 120 A
Rds On – Drain-Source Resistance: 1.8 mOhms
Vgs – Gate-Source Voltage: 20 V
Vgs th – Gate-Source Threshold Voltage: 2.1 V
Qg – Gate Charge: 124 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 214 W
Channel Mode: Enhancement
Tradename: OptiMOS
Packaging: Tube
Configuration: Single
Height: 15.65 mm
Length: 10 mm
Series: OptiMOS 5
Transistor Type: 1 N-Channel
Width: 4.4 mm
Brand: Infineon Technologies
Forward Transconductance – Min: 100 S
Fall Time: 19 ns
Product Type: MOSFET
Rise Time: 45 ns
Factory Pack Quantity: 500
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 51 ns
Typical Turn-On Delay Time: 24 ns
Part # Aliases: IPP020N06NAKSA1 SP000917406 IPP2N6NXK IPP020N06NAKSA1
Unit Weight: 0.211644 oz
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.
Summary of Features
Optimized for synchronous rectification
40% lower R DS(on) than alternative devices
40% improvement of FOM over similar devices
RoHS compliant – halogen free
MSL1 rated
Benefits
Highest system efficiency
Less paralleling required
Increased power density
System cost reduction
Very low voltage overshoot
Manufacturer:Infineon Technologies
Datasheet:IPP020N06N.pdf
