Description
IPP045N10N3GXKSA1 Infineon Single N-Channel 100V 4.5 mOhm 88 nC OptiMOS Power Mosfet – TO-220-3
Specifications
Manufacturer: Infineon
Product Category: MOSFET
RoHS
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 100 V
Id – Continuous Drain Current: 100 A
Rds On – Drain-Source Resistance: 3.9 mOhms
Vgs th – Gate-Source Threshold Voltage: 2 V
Vgs – Gate-Source Voltage: 20 V
Qg – Gate Charge: 117 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Configuration: Single
Pd – Power Dissipation: 214 W
Channel Mode: Enhancement
Tradename: OptiMOS
Packaging: Tube
Height: 15.65 mm
Length: 10 mm
Series: OptiMOS 3
Transistor Type: 1 N-Channel
Width: 4.4 mm
Brand: Infineon Technologies
Forward Transconductance – Min: 73 S
Fall Time: 14 ns
Product Type: MOSFET
Rise Time: 59 ns
Factory Pack Quantity: 500
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 48 ns
Typical Turn-On Delay Time: 27 ns
Part # Aliases: IPP045N10N3GXKSA1 IPP45N1N3GXK SP000680794
Unit Weight: 0.211644 oz
Manufacturer Part Number: IPP045N10N3GXKSA1
Manufacturer: Infineon Technologies
