Description
International Rectifier IRFD210 HD-1 200V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A HEXDIP PACKAGE
MOSFET Polarity:; Power Dissipation:1.3W; Drain-Source Breakdown Voltage:200V; Continuous Drain Current, Id:0.6A; Package/Case:HEXDIP; Leaded Process Compatible:No; Drain Source On Resistance @ 10V:1500mOhm RoHS Compliant: No
Id – Continuous Drain Current: 600 mA
Vds – Drain-Source Breakdown Voltage: 200 V
Rds On – Drain-Source Resistance: 1.5 Ohms
Transistor Polarity: N-Channel
Vgs – Gate-Source Breakdown Voltage: 20 V
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 1 W
Mounting Style: Through Hole
Package / Case: HVMDIP-4
Packaging: Tube
Channel Mode: Enhancement
Configuration: Single Dual Drain
Fall Time: 17 ns
Minimum Operating Temperature: – 55 C
Rise Time: 17 ns
Factory Pack Quantity: 2500
Typical Turn-Off Delay Time: 14 ns
Typical Turn-On Delay Time: 8.2 ns
Manufacturer Part Number: IRFD210
Manufacturer: Intersil
