Description
International Rectifier IRLHS6242TR2PBF N-channel MOSFET Transistor, 22 A, 20 V, 6-Pin PQFN
The IR range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Manufacturer: International Rectifier
Product Category: MOSFET
RoHS: RoHS Compliant Details
Id – Continuous Drain Current: 10 A
Vds – Drain-Source Breakdown Voltage: 20 V
Rds On – Drain-Source Resistance: 11.7 mOhms
Transistor Polarity: N-Channel
Vgs – Gate-Source Breakdown Voltage: 12 V
Qg – Gate Charge: 14 nC
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 1.98 W
Mounting Style: SMD/SMT
Package / Case: PQFN-6
Packaging: Reel
Brand: International Rectifier
Channel Mode: Enhancement
Configuration: Single
Fall Time: 13 ns
Forward Transconductance – Min: 36 S
Minimum Operating Temperature: – 55 C
Rise Time: 15 ns
Factory Pack Quantity: 400
Typical Turn-Off Delay Time: 19 ns
Typical Turn-On Delay Time: 5.8 ns
Jan 13, 2015 | Munich, Germany, and El Segundo, California – January 13, 2015 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) announced today the closing of the acquisition of International Rectifier. With effect from today, the El Segundo based company has become part of Infineon following the approval of all necessary regulatory authorities and International Rectifier’s shareholders.
Manufacturer Part Number: IRLHS6242TR2PBF
Manufacturer: International Rectifier
