Description
IRF1010EZPBF Infineon / IR MOSFET, Power, N-Ch, VDSS 60V, RDS(ON) 6.8Milliohms, ID 84A, TO-220AB, PD 140W, -55deg TO-220-3 RoHS
Specifications
Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 60 V
Id – Continuous Drain Current: 84 A
Rds On – Drain-Source Resistance: 8.5 mOhms
Vgs – Gate-Source Voltage: 20 V
Qg – Gate Charge: 58 nC
Configuration: Single
Pd – Power Dissipation: 140 W
Packaging: Tube
Height: 15.65 mm
Length: 10 mm
Transistor Type: 1 N-Channel
Width: 4.4 mm
Brand: Infineon Technologies
Factory Pack Quantity: 50
Part # Aliases: SP001571244
Unit Weight: 0.211644 oz
Manufacturer Part Number: IRF1010EZPBF
Manufacturer: Infineon Technologies
