Description
IR IRF540NPBF International Rectifier
MOSFET; N-Channel; 100 V (Min.); 33 A (Max.); 130 W (Max.); 11 ns (Typ.) TO-220AB
Specifications
Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 100 V
Id – Continuous Drain Current: 33 A
Rds On – Drain-Source Resistance: 44 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 2 V
Qg – Gate Charge: 47.3 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 140 W
Channel Mode: Enhancement
Packaging: Tube
Configuration: Single
Height: 15.65 mm
Length: 10 mm
Transistor Type: 1 N-Channel
Width: 4.4 mm
Brand: Infineon Technologies
Product Type: MOSFET
Factory Pack Quantity: 1000
Subcategory: MOSFETs
Unit Weight: 0.211644 oz
Manufacturer Part Number: IRF540-IR
Manufacturer: Infineon Technologies
