Description
IRF640NPBF Infineon Technologies / IR MOSFET N-Channel 200V 18A 150W Through Hole TO-220AB
Specifications
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 200 V
Id – Continuous Drain Current: 18 A
Rds On – Drain-Source Resistance: 150 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 2 V
Qg – Gate Charge: 44.7 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 150 W
Channel Mode: Enhancement
Packaging: Tube
Configuration: Single
Height: 15.65 mm
Length: 10 mm
Transistor Type: 1 N-Channel
Width: 4.4 mm
Brand: Infineon / IR
Forward Transconductance – Min: 6.8 S
Fall Time: 5.5 ns
Product Type: MOSFET
Rise Time: 19 ns
Factory Pack Quantity: 1000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 23 ns
Typical Turn-On Delay Time: 10 ns
Unit Weight: 0.068784 oz
Manufacturer: Infineon Technologies
MFG Part #: IRF640NPBF
