Description
IRF6645TRPBF Infineon / IR MOSFET N-Channel 100 V 5.7A (Ta), 25A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET RoHS
Specifications
Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: DirectFET-SJ
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 100 V
Id – Continuous Drain Current: 5.7 A
Rds On – Drain-Source Resistance: 28 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 4 V
Qg – Gate Charge: 14 nC
Minimum Operating Temperature: – 40 C
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 42 W
Channel Mode: Enhancement
Tradename: DirectFET
Packaging: Reel
Packaging: Cut Tape
Brand: Infineon / IR
Configuration: Single
Fall Time: 5.1 ns
Height: 0.7 mm
Length: 4.85 mm
Product Type: MOSFET
Rise Time: 5 ns
Reel: 4800
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 18 ns
Typical Turn-On Delay Time: 9.2 ns
Width: 3.95 mm
Part # Aliases: IRF6645TRPBF SP001562050
Unit Weight: 0.017637 oz
Manufacturer: Infineon Technologies
MFG Part #: IRF6645TRPBF
