Description
IRF7907TRPBF Infineon Dual N-Channel 30 V 16.4 mOhm 6.7 nC HEXFET Power Mosfet Surface Mount – SOIC-8
Specifications
Product Category: MOSFET
Manufacturer: Infineon
RoHS: RoHS Compliant
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SO-8
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 30 V
Id – Continuous Drain Current: 9.1 A, 11 A
Rds On – Drain-Source Resistance: 17.1 mOhms, 11.5 mOhms
Vgs – Gate-Source Voltage: 20 V
Vgs th – Gate-Source Threshold Voltage: 1.8 V
Qg – Gate Charge: 6.7 nC, 14 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Packaging: Reel
Brand: Infineon Technologies
Configuration: Dual
Fall Time: 3.4 ns, 5.3 ns
Forward Transconductance – Min: 19 S, 24 S
Height: 1.75 mm
Length: 4.9 mm
Pd – Power Dissipation: 2.0 W
Rise Time: 9.3 ns, 14 ns
Factory Pack Quantity: 4000
Transistor Type: 2 N-Channel
Typical Turn-Off Delay Time: 8 ns, 13 ns
Typical Turn-On Delay Time: 6 ns, 8 ns
Width: 3.9 mm
Manufacturer Part Number: IRF7907TRPBF
Manufacturer: Infineon Technologies
