Description
IRF820 Diodes Inc. N-Channel MOSFET 500V 2.5 Amps 3-Pin(3+Tab) TO-220AB, Through Hole
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Part Specification:
- Type : Power MOSFET
- Number of Elements : Single
- Polarity : N
- Channel Mode : Enhancement
- Drain-Source On-Volt : 500V
- Gate-Source Voltage (Max) : ±20V
- Drain Current (Max) : 2.5A
- Drain-Source On-Res : 3Ohm
- Package Type : TO-220AB
- Power Dissipation : 50W
- Output Power (Max) : Not RequiredW
- Frequency (Max) : Not RequiredMHz
- Noise Figure : Not RequireddB
- Power Gain : Not RequireddB
- Drain Efficiency : Not Required%
- Pin Count : 3 +Tab
- Mounting : Through Hole
- Operating Temp Range : -55C to 150C
- Operating Temperature Classification : Military
Manufacturer Part Number: IRF820
Manufacturer: Diodes Inc.
