Description
IRFBE20PBF Vishay Power Mosfet Single N-Channel 800 V 6.5 Ohms Flange Mount TO-220-3 RoHS
Key Features
Dynamic dV/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Compliant to RoHS Directive 2002/95/EC
Product Attributes
Categories Discrete Semiconductor Products
Transistors – FETs, MOSFETs – Single
Manufacturer Vishay Siliconix
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current – Continuous Drain (Id) @ 25C 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250A
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Vgs (Max) 20V
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V
Power Dissipation (Max) 54W (Tc)
Rds On (Max) @ Id, Vgs 6.5 Ohm @ 1.1A, 10V
Operating Temperature -55C ~ 150C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Manufacturer Part Number: IRFBE20PBF
Manufacturer: Vishay
