Description
IRFR4510TRPBF Infineon Technologies Single N-Channel 100 V 13.9 mOhm 54 nC HEXFET Power Mosfet TO-252-3
Specifications
Manufacturer: Infineon
Product Category: MOSFET
RoHS
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TO-252-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds – Drain-Source Breakdown Voltage: 100 V
Id – Continuous Drain Current: 63 A
Rds On – Drain-Source Resistance: 13.9 mOhms
Vgs th – Gate-Source Threshold Voltage: 3 V
Qg – Gate Charge: 54 nC
Configuration: Single
Pd – Power Dissipation: 143 W
Channel Mode: Enhancement
Tradename: StrongIRFET
Packaging: Reel
Height: 2.3 mm
Length: 6.5 mm
Transistor Type: 1 N-Channel
Width: 6.22 mm
Brand: Infineon Technologies
Forward Transconductance – Min: 62 S
Fall Time: 34 ns
Product Type: MOSFET
Rise Time: 42 ns
Factory Pack Quantity: 2000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 42 ns
Typical Turn-On Delay Time: 18 ns
Part # Aliases: SP001567870
Unit Weight: 0.139332 oz
Manufacturer Part Number: IRFR4510TRPBF
Manufacturer: Electronic Components
