Description
IRFR4620TRLPBF Infineon Technologies Transistor MOSFET N-channel 200V 24A HEXFET, 3-Pin DPAK RoHS
Specifications
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package / Case: TO-252-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds – Drain-Source Breakdown Voltage: 200 V
Id – Continuous Drain Current: 24 A
Rds On – Drain-Source Resistance: 78 mOhms
Vgs – Gate-Source Voltage: – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage: 1.8 V
Qg – Gate Charge: 25 nC
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 175 C
Pd – Power Dissipation: 144 W
Channel Mode: Enhancement
Packaging: Cut Tape
Packaging: Reel
Configuration: Single
Height: 2.3 mm
Length: 6.5 mm
Transistor Type: 1 N-Channel
Width: 6.22 mm
Brand: Infineon / IR
Forward Transconductance – Min: 37 S
Fall Time: 14.8 ns
Product Type: MOSFET
Rise Time: 22.4 ns
Factory Pack Quantity: 3000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 25.4 ns
Typical Turn-On Delay Time: 13.4 ns
Unit Weight: 0.011640 oz
Manufacturer: Infineon Technologies
MFG Part #: IRFR4620TRLPBF
