Description
IRGP30B120KD-EP Infineon Technologies / IR Transistor IGBT Chip N-CH 1200V 60A 300000mW 3-Pin(3+Tab) TO-247AD Tube RoHS
Specifications
Manufacturer: Infineon
Product Category: IGBT Transistors
Technology: Si
Package / Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 2.28 V
Maximum Gate Emitter Voltage: 20 V
Continuous Collector Current at 25 C: 60 A
Pd – Power Dissipation: 300 W
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Packaging: Tube
Continuous Collector Current Ic Max: 60 A
Height: 24.3 mm
Length: 15.7 mm
Width: 5.1 mm
Brand: Infineon / IR
Product Type: IGBT Transistors
Factory Pack Quantity: 400
Subcategory: IGBTs
Unit Weight: 1.340411 oz
Lifecycle:Obsolete
Manufacturer: Infineon Technologies
MFG Part #: IRGP30B120KD-EP
