Description
International Rectifier IRLML5203TRPBF P CHANNEL MOSFET, -30V, 3A, SOT-23, FULL REEL, Transistor Polarity:P Channel, Continuous Drain Current Id:-3A, Drain Source Voltage Vds:-30V, On Resistance Rds(on):98mohm, Rds(on) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-2.5V , RoHS
^Manufacturer: International Rectifier
^Product Category: MOSFET
^RoHS: RoHS Compliant Details
^Id – Continuous Drain Current: – 3 A
^Vds – Drain-Source Breakdown Voltage: – 30 V
^Rds On – Drain-Source Resistance: 165 mOhms
^Transistor Polarity: P-Channel
^Vgs – Gate-Source Breakdown Voltage: 20 V
^Qg – Gate Charge: 9.5 nC
^Pd – Power Dissipation: 1.25 W
^Mounting Style: SMD/SMT
^Package / Case: SOT-23-3
^Packaging: Reel
^Brand: International Rectifier
^Factory Pack Quantity: 3000
The IRLML5203PBF from International Rectifier is -30V single P channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching, as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications like battery management, portable electronics, PCMCIA cards and ideal for applications where printed circuit board space is at a premium.
Drain to source voltage (Vds) of -30V
Gate to source voltage of ±20V
On resistance Rds(on) of 98mohm at Vgs -10V
Power dissipation Pd of 1.25W at 25°C
Continuous drain current Id of -3A at vgs -10V and 25°C
Operating junction temperature range from -55°C to 150°C
Applications
Power Management, Industrial, Portable Devices, Consumer Electronics
Manufacturer Part Number: IRLML5203TRPBF
Manufacturer: Infineon Technologies
