Description
Isocom MCT2 Optocoupler Transistor DC-IN 1-CH W/Base 6-Pin
| MCT2E, MCT2 |
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- Circuit and Package
- Features
- Description
- Absolute Maximum Ratings
- Electrical Characteristics
- Reliability and Approvals
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Circuit and Package |
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Features |
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2500 or 1500 V Isolation.
High DC Current Transfer Ratio.
Low Cost Dual-In-Line Package. |
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Description |
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The MCT2E, MCT2 are optically coupled isolators consisting of a Gallium Arsenide infrared emitting diode and an NPN silicon phototransistor mounted in a standard 6-pin dual-in-line package. Surface Mount Option Available.
All electrical parameters are 100% tested by manufacturing. Specifications are guaranteed to a cumulative 0.65% AQL. |
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Absolute Maximum Ratings (Ta=25°C) |
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Storage Temperature:
Operating Temperature:
Lead Soldering:
Input-to-Output Isolation Voltage: |
-55°C to +150°C
-55°C to +100°C
260°C for 10s, 1.6mm from case
±1500V (MCT2)
±2500V (MCT2E) |
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Input Diode
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Forward DC Current:
Reverse DC Voltage:
Peak Forward Current:
Power Dissipation:
Derate Linearly: |
60mA
3V
3A (t p=10µs)
100mW
1.33mW/°C above 25°C |
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Output Transistor
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Collector-Emitter Voltage:
Emitter-Collector Voltage:
Collector-Base Voltage:
Power Dissipation:
Derate Linearly: |
30V
7V
70V
150mW
2.00mW/°C above 25°C |
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Package
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Total Power Dissipation:
Derate Linearly: |
250mW
3.3mW/°C above 25°C |
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Electro-optical Characteristics |
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| INPUT |
PARAMETER |
CONDITIONS |
MIN |
TYP |
MAX |
UNIT |
| VF |
Forward Current |
IF=20mA |
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1.2 |
1.5 |
V |
| IR |
Reverse Current |
VR=3V |
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10 |
µA |
| VR |
Reverse Breakdown Voltage |
IR=10µA |
3 |
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V |
| OUTPUT |
| BVCEO |
Collector-Emitter Voltage |
IC=1mA |
30 |
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V |
| BVECO |
Emitter-Collector Voltage |
IE=100µA |
7 |
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V |
| BVCBO |
Collector-Base Voltage |
IC=100µA |
70 |
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V |
| ICEO |
Collector-Emitter Dark Current |
VCE=10V, IB=0 |
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50 |
nA |
| ICBO |
Collector-Base Dark Current |
VCB=10V, IE=0 |
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20 |
nA |
| CCE |
Collector-Emitter Capacitance |
VCE=0 |
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10 |
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pF |
| HFE |
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VCE=5.0V, IC=100µA |
100 |
150 |
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| COUPLED |
PARAMETER |
CONDITIONS |
MIN |
TYP |
MAX |
UNIT |
| IC/IF |
DC Current Transfer Ratio |
IF=10mA, VCE=10V, IB=0 |
20 |
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% |
| RIO |
Input-to-Output Isolation Resistance |
VIO=500V, (note 1) |
1E11 |
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ohm |
| VCE(SAT) |
Collector-Emitter Saturation Voltage |
IF=10mA, IC=2.5mA |
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0.4 |
V |
| CIO |
Capacitance Input to Output |
f=1MHz, (note 1) |
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0.6 |
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pF |
| TR |
Output Rise Time |
VCC=10V, IC=2mA |
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2 |
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µs |
| TF |
Output Fall Time |
RL=100? |
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2 |
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µs |
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Input-Output Isolation Voltage |
(Note 1) |
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| MCT2E |
2500 |
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V |
| MCT2 |
1500 |
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V |
Notes
1. Measured with input leads shorted together and output leads shorted together.
Isocom takes great effort to ensure accurate data, but regrettably cannot be held liable for any error on its website.
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Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon npn Phototransistor High Direct-Current Transfer Ratio Base Lead Provided for Conventional Transistor Biasing High-Voltage Electrical Isolation. or 3.55-kV Rating Plastic Dual-In-Line Package High-Speed Switching: = 5 µs, 5 µs Typical Designed to be Interchangeable with General Instruments MCT2 and MCT2E
Manufacturer Part Number: MCT2.
Manufacturer: Isocom
