Description
K4B1G1646G-BCK0 IC,SDRAM,DDR,8X8MX16,CMOS,BGA,96PIN,PLASTIC
^Part Category: Memory ICs
^Manufacturer: Samsung Semiconductor Division
^
^SPECIFICATIONS
^REACH Compliant Yes
^EU RoHS Compliant Yes
^Status Active
^Sub Category DRAMs
^Access Time-Max 0.2250 ns
^Clock Frequency-Max (fCLK) 800 MHz
^Interleaved Burst Length 4,8
^I/O Type COMMON
^JESD-30 Code R-PBGA-B96
^JESD-609 Code e3
^Memory Density 1.07E9 bit
^Memory IC Type DDR DRAM
^Moisture Sensitivity Level 1
^Number of Terminals 96
^Number of Words 6.71E7 words
^Number of Words Code 64M
^Organization 64MX16
^Output Characteristics 3-STATE
^Package Body Material PLASTIC/EPOXY
^Package Code FBGA
^Package Equivalence Code BGA96,9X16,32
^Package Shape RECTANGULAR
^Package Style GRID ARRAY, FINE PITCH
^Peak Reflow Temperature (Cel) 225
^Power Supplies (V) 1.5
^Qualification Status Not Qualified
^Refresh Cycles 8192
^Sequential Burst Length 4,8
^Standby Current-Max 0.0100 Amp
^Supply Current-Max 0.1950 Amp
^Supply Voltage-Nom (Vsup) 1.5 V
^Surface Mount YES
^Technology CMOS
^Terminal Finish MATTE TIN
^Terminal Form BALL
^Terminal Pitch 0.8000 mm
^Terminal Position BOTTOM
Manufacturer Part Number: K4B1G1646G-BCK0
Manufacturer: Samsung
