Description
K4T1G164QF-BCE7 Samsung Semiconductor 1Gbit 64Mx16 DDR2-800 5-5-5 SDRAM 800MHz 84-FBGA RoHS
The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit
x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous
device achieves high speed double-data-rate transfer rates of up to 800Mb/
sec/pin (DDR2-800) for general applications.
The chip is designed to comply with the following key DDR2 SDRAM features
such as posted CAS with additive latency, write latency = read latency
– 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.
All of the control and address inputs are synchronized with a pair of externally
supplied differential clocks.
Manufacturer:Samsung
Datasheet:Samsung/k4t1g164qf-bce7-26786841.pdf
