Description
KTD718-O-U/P KEC Semiconductor Bipolar Transistors – BJT 10uA 120V 80W 10A 55@1A,5V +150C @(Tj) 12MHz 2V@6A, 600mA NPN TO-3P ROHS RoHS
Manufacturer: KEC
Manufacturer Part No: KTD718-O/P
Package / Case: TO-3P
RoHS: Yes
Transistor
Transistor Type: NPN
Collector-Emitter Voltage(VCEO): 120Vdc
Collector Current(IC): 10A
DC Current Gain Min(hFE): 80
Transition Frequency(Ft,Typ): 12MHz
Features: High Power Amplifier
Characteristics of KTD718 Transistor
Type: NPN
Collector-Emitter Voltage: 120 V
Collector-Base Voltage: 120 V
Emitter-Base Voltage: 5 V
Collector Current: 10 A
Collector Dissipation: 80 W
DC Current Gain (hfe): 55 to 160
Transition Frequency: 12 MHz
Operating and Storage Junction Temperature Range: -55 to +150 C
Package: TO-3P
Manufacturer:KEC Semiconductors
Datasheet:Others/A-3648.pdf
