Description
LBSS138LT1G LRC LRC Leshan Radio Co Ltd MOSFET
NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: LBSS5240LT1G .
Key Features
Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation Replacement for SOT89/SOT223 standard packaged transistors We declare that the material of product compliance with RoHS requirements S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
Technical Attributes
Description Value Find similar Parts
Operating Temperature -55 to 150 C
Maximum Drain Source Voltage 50 V
Maximum Processing Temperature 260 C
Package Dimensions 3.04 x 1.4 x 1.11 mm
Channel Mode Enhancement
Mounting Surface Mount
Typical Turn-Off Delay Time 20 ns
Maximum Continuous Drain Current 0.2 A
Maximum Gate Source Voltage 20 V
Typical Turn-On Delay Time 20 ns
RDS-on 3.5@5V Ohm
Channel Type N
Manufacturer:LRC
Datasheet:Others/LBSS138LT1G.pdf
