Description
MICROSEMI APT45GP120BG
IGBT Transistors Insulated Gate Bipolar Transistor – PT Power MOS 7 – Single
1200V 100A 625W TO247 RoHS
The APT45GP120BG IGBT transistor from Microsemi is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 625000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
Specifications
Manufacturer: Microsemi
Product Category: IGBT Transistors
RoHS: RoHS Compliant
Configuration: Single
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 3.3 V
Maximum Gate Emitter Voltage: 30 V
Continuous Collector Current at 25 C: 100 A
Gate-Emitter Leakage Current: 100 nA
Pd – Power Dissipation: 625 W
Mounting Style: Through Hole
Package / Case: TO-247-3
Maximum Operating Temperature: + 150 C
Packaging: Tube
Brand: Microsemi
Continuous Collector Current: 100 A
Continuous Collector Current Ic Max: 100 A
Height: 5.31 mm
Length: 21.46 mm
Minimum Operating Temperature: – 55 C
Operating Temperature Range: – 55 C to + 150 C
Factory Pack Quantity: 28
Tradename: POWER MOS 7 IGBT
Width: 16.26 mm
Unit Weight: 1.340411 oz
Manufacturer:Microsemi
Datasheet:APT45GP120B_C.pdf
