Description
These ICs protect S-RAM data in back-up mode (CS signal makes R-SAM CE pin low and CE pin high) when power supply voltage goes below a certain set voltage (detection voltage 3.5V, 4.2V typ.). Further, it switches from main power supply to battery back-up when power supply voltage drops. Conversely, when power supply rises, it first switches the S-RAM from battery back-up to main power supply (switching voltage 3.3V typ.), then from back-up mode to normal mode (CS signal makes S-RAM CE pin high and CE pin low). These signal processes provide reliable protection against data damage.
Features
1 Power supply switching circuit (switching between main power supply and battery) 2 CS control for S-RAM (normal mode : S-RAM can be accessed, back-up mode: S-RAM can not be accessed low current consumption mode) 3 With CS signal gate circuit
1. Battery back-up 1. Low IC current consumption (loss current) 2. Drop voltage inside IC (input/output voltage difference) 3. Reverse current (reverse leak current) 2. Normal operation 1. Drop voltage inside IC (input/output voltage difference) 2. Output voltage VCC=5V 3. Battery-VCC switching voltage 4. Detection voltage (CS, CS, reset output)
0.3µA typ. 0.3V typ. 0.1µA max. 0.2V typ. 4.8V typ. 3.3V typ.
Applications
Memory cards (S-RAM cards) PCs, word processors Fax machines, photocopiers, other office equipment Sequence controllers, other FA equipment Video games and other equipment with S-RAMs
Item Storage temperature Operating temperature Power supply voltage Operating voltage Allowable loss Output current Output current
(Ta=25°C) Symbol TSTG TOPR VCC max. VCCOP IO1 IO2 Rating Units mA µA
Note : IO1 expresses VCC output current value, and IO2 expresses VBATT output current value.
Manufacturer:Electronic Components
Datasheet:MM1134BF.pdf
