Description
MMBT3904 _R1 _00001 PanJit mall Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, SiliconFeatures
NPN epitaxial silicon, planar design
Collector-emitter voltage VCE = 40V
Collector current IC = 200mA
Transition frequency fT>300MHz @ IC=10mAdc, VCE=20Vdc,f=100MHz
Lead free in comply with EU RoHS 2011/65/EU directives.
Green molding compound as per IEC61249 Std: (Halogen Free)
Technical Attributes
Description Value Find similar Parts
Maximum Power Dissipation 225 mW
Maximum Collector Emitter Voltage 40 V
Maximum Collector Base Voltage 60 V
Maximum Base Emitter Saturation Voltage 0.85@1mA@10mA|0.95@5mA@50mA V
Operating Temperature -55 to 150 C
Supplier Package SOT-23
Maximum DC Collector Current 0.2 A
Mounting Surface Mount
Product Dimensions 3.04(Max) x 1.4(Max) x 1(Max)
Maximum Transition Frequency 300 MHz
Minimum DC Current Gain 40@0.1mA@1V|70@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V
Maximum Emitter Base Voltage 6 V
Pin Count 3
Maximum Collector Emitter Saturation Voltage 0.2@1mA@10mA|0.3@5mA@50mA V
Type NPN
Manufacturer:Panjit
Datasheet:PNJI-S-A0000093501-1.pdf
