MMBT5401 National Semiconductor PNP Transistor 150V 0.6A SMD SOT-23

Nsc – Nsc Mmbt5401 Transistor Transistor; Transistor Type:Bipolar; Transistor Polarity:Dual P Channel; Power Dissipation, Pd:0.35W; DC Current Gain Min (hfe):50; C-E Breakdown Voltage:150V; Collector Current:0.6A; DC Current Gain Max (hfe):240

Description

MMBT5401 National Semiconductor PNP Transistor 150V 0.6A SMT / SMD SOT-23

National Semiconductor Mmbt5401 Transistor Transistor; Transistor Type:Bipolar; Transistor Polarity:Dual P Channel; Power Dissipation, Pd:0.35W; DC Current Gain Min (hfe):50; C-E Breakdown Voltage:150V; Collector Current:0.6A; DC Current Gain Max (hfe):240

Product Category: Bipolar Transistors – BJT
Configuration: Single
Transistor Polarity: PNP
Collector- Base Voltage VCBO: – 160 V
Collector- Emitter Voltage VCEO Max: – 150 V
Emitter- Base Voltage VEBO: – 5 V
Collector-Emitter Saturation Voltage: – 0.5 V
Maximum DC Collector Current: 0.6 A
Gain Bandwidth Product fT: 300 MHz
Maximum Operating Temperature: + 150 C
Mounting Style: SMD/SMT
Package / Case: SOT-23
Brand: Fairchild Semiconductor
DC Collector/Base Gain hfe Min: 60
DC Current Gain hFE Max: 240
Minimum Operating Temperature: – 55 C
Packaging: Reel
Pd – Power Dissipation: 350 mW
Series: MMBT5401
Factory Pack Quantity: 3000
Part # Aliases: MMBT5401_NL
Unit Weight: 0.002116 oz
Manufacturer Part Number: MMBT5401
Manufacturer: National Semiconductor

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