Description
MOTOROLA IRF840 MOSFET .8A 500V TRANSISTOR TO-220
Third generation Power MOSFETs provide the designer with the best combi nation of fast switching, ruggedized device design , low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance thro ughout the industry
Product Category: MOSFET
RoHS: No
Id – Continuous Drain Current: 8 A
Vds – Drain-Source Breakdown Voltage: 500 V
Rds On – Drain-Source Resistance: 850 mOhms
Transistor Polarity: N-Channel
Vgs – Gate-Source Breakdown Voltage: 20 V
Maximum Operating Temperature: + 150 C
Mounting Style: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Channel Mode: Enhancement
Configuration: Single
Fall Time: 20 ns
Minimum Operating Temperature: – 55 C
Pd – Power Dissipation: 125 W
Rise Time: 23 ns
Factory Pack Quantity: 1000
Typical Turn-Off Delay Time: 49 ns
Typical Turn-On Delay Time: 14 ns
Manufacturer Part Number: IRF840+
Manufacturer: Motorola
