Description
ON Semiconductor MTD2955ET4 Transistor 12A, 60V, 0.3ohm, P-CHANNEL, POWER MOSFET DPAK
This advanced MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain − to − source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients
Manufacturer: ON Semiconductor
Product Category: MOSFET
Id – Continuous Drain Current: 12 A
Vds – Drain-Source Breakdown Voltage: – 60 V
Rds On – Drain-Source Resistance: 300 mOhms
Transistor Polarity: P-Channel
Vgs – Gate-Source Breakdown Voltage: 15 V
Maximum Operating Temperature: + 150 C
Pd – Power Dissipation: 75 W
Mounting Style: SMD/SMT
Package / Case: DPAK-3
Packaging: Reel
Brand: ON Semiconductor
Channel Mode: Enhancement
Configuration: Single
Fall Time: 8 ns
Forward Transconductance – Min: 4.8 S
Minimum Operating Temperature: – 55 C
Rise Time: 39 ns
Typical Turn-Off Delay Time: 17 ns
Typical Turn-On Delay Time: 9 ns
Manufacturer:ON Semiconductor
Datasheet:on-semi/MTD2955E.pdf
