National Semiconductor LM13700M Transconductance Amplifier, Dual, 36V, 2 MHz, -5V, 5V, 16-SOIC

National Semiconductor LM13700M Transconductance Amplifier, Dual, 36V, 2 MHz, -5V, 5V, 16-SOIC

Nsc – Nsc Lm13700M Ic Dual Op T Ransconductan Ce Soic-16 IC

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SKU: LM13700M Categories: , , Tag: Brand:

Description

The LM13700 series consists of two current-controlled transconductance amplifiers, each with differential inputs and a push-pull output. The two amplifiers share common supplies but otherwise operate independently. Linearizing diodes are provided at the inputs to reduce distortion and allow higher input levels. The result is a 10-dB signal-to-noise improvement referenced to 0.5 percent THD. High impedance buffers are provided which are especially designed to complement the dynamic range of the amplifiers. The output buffers of the LM13700 differ from those of the LM13600 in that their input bias currents (and thus their output DC levels) are independent of IABC. This may result in performance superior to that of the LM13600 in audio applications.

National Semiconductor / Texas Instruments LM13700M Dual Operational Amplifier SMD / SMT SOIC-16

The LM13700M/NOPB is a dual-operational Transconductance Amplifier with linearizing diodes and buffers, each with differential inputs and a push-pull output. The two amplifiers share common supplies but otherwise operate independently. Linearizing diodes are provided at the inputs to reduce distortion and allow higher input levels. The result is a 10dB signal-to-noise improvement referenced to 0.5% THD. High impedance buffers are provided which are especially designed to complement the dynamic range of the amplifiers. The output buffers of the LM13700M/NOPB differ from those of the LM13600 in that their input bias currents (and hence their output DC levels) are independent of IABC. This may result in performance superior to that of the LM13600 in audio applications.
  • Adjustable gm over 6 decades
  • Excellent gm linearity
  • Excellent matching between amplifiers
  • Linearizing diodes
  • High impedance buffers
  • High output signal-to-noise ratio
  • Green product and no Sb/Br
Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

Manufacturer:National Semiconductor
Datasheet:TI/lm13700.pdf

Additional information

Weight 0.01 lbs

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