Description
NATIONAL SEMI – NSC MMBT3640 Bipolar Transistors – BJT Switching Transistor PNP SW 12V SOT-23 PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics.
Specifications
Product Category: Bipolar Transistors – BJT
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: PNP
Configuration: Single
Collector- Emitter Voltage VCEO Max: 12 V
Collector- Base Voltage VCBO: 12 V
Emitter- Base Voltage VEBO: 4 V
Collector-Emitter Saturation Voltage: 0.6 V
Maximum DC Collector Current: 0.2 A
Pd – Power Dissipation: 225 mW
Gain Bandwidth Product fT: 500 MHz
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Series: MMBT3640
Packaging: Cut Tape
Packaging: Reel
DC Current Gain hFE Max: 120
Technology: Si
Continuous Collector Current: 0.2 A
DC Collector/Base Gain hfe Min: 30
Product Type: BJTs – Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
Lifecycle: Obsolete
Manufacturer Part Number: MMBT3640-NSC
Manufacturer: National Semiconductor
