NSS1C300ET4G ON Semiconductor Transistor PNP 100V 3A DPAK

NSS1C300ET4G ON Semiconductor Transistor PNP, 100V, TO-252-4, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:100V, Transition Frequency ft:100MHz, Power Dissipation Pd:33W, DC Collector Current:3A, DC Current Gain hFE:50hFE, RoHS Compliant

Description

NSS1C300ET4G ON Semiconductor Bipolar (BJT) Transistor PNP 100V 3A 100MHz 2.1W Surface Mount DPAK
Specifications

Manufacturer: ON Semiconductor
Product Category: Bipolar Transistors – BJT
RoHS
Mounting Style: SMD/SMT
Package / Case: DPAK-3
Transistor Polarity: PNP
Configuration: Single
Collector- Emitter Voltage VCEO Max: 100 V
Collector- Base Voltage VCBO: 140 V
Emitter- Base Voltage VEBO: 6 V
Collector-Emitter Saturation Voltage: 0.4 V
Maximum DC Collector Current: 3 A
Gain Bandwidth Product fT: 100 MHz
Minimum Operating Temperature: – 65 C
Maximum Operating Temperature: + 150 C
Series: NSS1C300E
DC Current Gain hFE Max: 360
Packaging: Cut Tape
Packaging: Reel
Brand: ON Semiconductor
Continuous Collector Current: 3 A
CNHTS: 8541210000
HTS Code: 8541210095
MXHTS: 85366999
Pd – Power Dissipation: 33 W
Product Type: BJTs – Bipolar Transistors
Qualification: AEC-Q101
Factory Pack Quantity: 2500
Subcategory: Transistors
TARIC: 8536699099
Unit Weight: 0.012346 oz
Manufacturer Part Number: NSS1C300ET4G
Manufacturer: Electronic Components

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